分析网关氧化物选对SiC电源MOSFET接口陷密度的影响,使用一种新的温度触发方法
Monikuntala Bhattacharya1, Michael Jin1, Hengyu Yu1
1Department of Electrical & Computer Engineering, The Ohio State University, Columbus, OH 43210, USA.
Micromachines
|April 26, 2025
概括
一种新的温度触发方法简化了4H-SiC MOSFET中的缺陷分析. 沟门设备显示的缺陷比平面设备少,提高了可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 电气工程 电气工程
背景情况:
- 在4H-化碳 (SiC) 金属氧化物半导体场效应晶体管 (MOSFET) 中,在传导带边缘附近描述接口陷密度 (Dit) 对设备性能和可靠性至关重要.
- 现有的矿提取方法往往很复杂,需要专门的设备和详细的设备制造知识,这限制了它们用于商业设备分析的使用.
研究的目的:
- 引入一种新的,简化的温度触发值电压转移 (T3VS) 方法,用于分析商用4H-SiC MOSFET中的能源依赖的Dit分布.
- 为了比较平面和沟门4H-SiC MOSFET中的Dit水平.
- 为了研究室温门氧化物选方法 (SWAP) 对Dit分布的影响.
主要方法:
- 使用温度触发值电压转移 (T3VS) 技术,该技术仅依赖于设备传输特性.
- 将T3VS应用于商用1.2kV 4H-SiC MOSFET,具有平面结构和沟结构.
- 使用T3VS方法检查了调整脉冲 (SWAP) 方法对平面MOSFET中的DIT查的影响.
主要成果:
- T3VS方法提供了一种简单的Dit分析方法,不需要复杂的仪器或先前的设备信息.
- 与平面门装置相比,沟门4H-SiC MOSFET的接口陷密度 (Dit) 显著降低.
- 发现SWAP选技术具有侵略性,可能在导电带边缘附近引入新的缺陷状态.
结论:
- T3VS方法提供了一种实用且易于使用的工具,用于评估商业4H-SiC MOSFET中的Dit.
- 在DIT方面,沟门结构优于平面结构,从而提高了可靠性和效率.
- 需要仔细优化SWAP选过程,以避免引入有害缺陷并确保设备的可靠性.
相关概念视频
01:25MOS Capacitor
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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01:22MOSFET: Enhancement Mode
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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01:16MOSFET
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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01:20MOSFET: Depletion Mode
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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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01:24Metal-Semiconductor Junctions
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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01:29Field Effect Transistor
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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
256