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平面核心-外无连接的 MOSFET

Cunhua Dou^1,2, Weijia Song¹, Yu Yan^1,2

¹Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510300, China.

|April 26, 2025

概括

一种新型的核心-shell无连接场效应晶体管 (CS-JL FET) 通过添加未使用过的外层来提高性能. 这种设计显著提高了高级半导体应用的移动性,传导性和驱动电流.

科学领域:

半导体设备物理学半导体设备物理
先进的 MOSFET 架构可以使用.
在绝缘体上的 (SOI) 技术.

背景情况:

传统的无连接 MOSFET 在性能和可扩展性方面存在局限性.
全消耗上绝缘体 (FD-SOI) 技术提供了独特的加工优势.
优化晶体管设计对于下一代集成电路至关重要.

研究的目的:

介绍和分析一个新的核心外无接线MOSFET (CS-JL FET) 的性能.
评估核心外结构对设备特性的影响.
为了证明CS-JL FET与已建立的半导体制造工艺的兼容性.

主要方法:

制造符合FD-SOI工艺要求的CS-JL FET.
排水电流,透导和电容的实验性表征.
与传统无连接 MOSFET 的比较分析.
对于值电压控制的设备参数工程.

主要成果:

与传统设计相比,CS-JL FET表现出显著的性能提升.
添加一个未使用过的外层会使峰值移动性,传导性和驱动电流增加一个数量级.
设备参数 (核心剂和厚度) 可以调整为正常关闭的操作.
CS-JL FET 架构兼容背向偏差和设备缩放.

结论:

核心外无连接的MOSFET为高性能半导体设备提供了一个有前途的进步.
拟议的结构有效地利用FD-SOI技术来改进设备指标.
CS-JL FET为未来的集成电路扩展和增强功能提供了可行的途径.

关键词:

在FD-SOI中.核心外核心外没有连接,没有连接点.迷你化的迷你化移动性是一种流动性.一个平面的 MOSFET.

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