低压化学蒸汽沉积SiNx过程研究及其对AlGaN/GaN MISHEMTs接口特征的影响
Hu Sun1, Qian Fan1, Xianfeng Ni1
1Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China.
Micromachines
|April 26, 2025
概括
这项研究优化了半导体设备的低压化学蒸汽沉积 (LPCVD) 化 (SiNx). 优化的SiNx提高了二维电子气体 (2DEG) 的性能,并减少了接口陷.
科学领域:
- 半导体设备物理 半导体设备物理
- 材料科学与工程 材料科学与工程
- 表面化学 表面化学
背景情况:
- 低压化学蒸汽沉积 (LPCVD) 化 (SiNx) 对于半导体设备制造至关重要.
- 优化SiNx生长条件对于提高设备性能和可靠性至关重要.
- 了解SiNx特性和设备特性之间的关系是先进电子学的关键.
研究的目的:
- 系统地研究LPCVD SiNx生长参数对介电质量和设备性能的影响.
- 优化LPCVD SiNx生长条件,以改善门介电和表面被动化层.
- 分析SiNx组成和生长参数对二维电子气体 (2DEG) 特性和接口陷密度的影响.
主要方法:
- 使用低压化学蒸汽沉积 (LPCVD) 来生长SiNx薄膜.
- 不同的生长参数包括温度,室内压力和气体流量比率.
- 通过使用脉冲模式IDS-VGS和频率依赖电容-电压 (C-V) 测量等技术来表征SiNx薄膜和接口.
主要成果:
- 富含Si和富含N的SiNx化合物都提高了2DEG密度的改善.
- 接口陷密度随着SiNx中Si-to-N比率的增加而降低.
- 优化了LPCVD生长参数,从而提高了介电层质量和设备性能.
结论:
- LPCVD SiNx是一种适用于门介电和被动化层的可行材料.
- SiNx组成显著影响2DEG的性能和接口特性.
- 控制SiNx的增长可以优化半导体设备的特性.
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