关于电迁移诱导的故障和AlCu互连中的储效应的调查
Yuanxiang Zhang1, Guoquan Jiang1,2, Jingbo Zhao1,2
1College of Mechanical Engineering, Quzhou University, Quzhou 324000, China.
Micromachines
|April 26, 2025
概括
电迁移 (EM) 是-铜 (AlCu) 互连的可靠性问题. 这项研究验证了原子密度积分 (ADI) 方法用于预测EM故障,显示储库可以将互连寿命提高到关键长度.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 可靠性工程可靠性工程
背景情况:
- 铜 (AlCu) 合金是微电子中的关键互连材料.
- 收缩装置中电流密度的增加加剧了电迁移 (EM) 的担忧.
- 电迁移对AlCu互联网构成了重大可靠性挑战.
研究的目的:
- 为了研究电迁移引起的AlCu互连中的降解.
- 为了验证原子密度积分 (ADI) 方法用于EM故障预测.
- 分析水库结构对相互连接可靠性的影响.
主要方法:
- 使用0.18μm技术制造两层AlCu连接器与Ti/TiN屏障.
- 在不同电流密度和温度下进行加速电迁移试验.
- 在ANSYS平台上使用原子密度积分 (ADI) 方法进行数值模拟.
- 用有限元建模来研究储效应.
主要成果:
- 观察了EM降解过程中的空隙核和演变.
- ADI方法准确地模拟了实验EM故障.
- 储结构被证明可以提高AlCu互连连接的平均时间到故障 (MTTF).
- 确定了一个关键的储水池延长长度,超出该长度后,没有进一步的寿命改善.
结论:
- ADI 方法是预测 AlCu 互连中电迁移故障的可行工具.
- 储工程可以有效地提高微电子互连的可靠性.
- 了解储效应对于设计强大的电子设备至关重要.
相关概念视频
Energy Stored In A Coaxial Cable
A coaxial cable consists of a central copper conductor used for transmitting signals, followed by an insulator shield, a metallic braided mesh that prevents signal interference, and a plastic layer that encases the entire assembly.
In the simplest form, a coaxial cable can be represented by two long hollow concentric cylinders in which the current flows in opposite directions. The magnetic field inside and outside the coaxial cable is determined by using Ampère's law. The magnetic field inside...
In the simplest form, a coaxial cable can be represented by two long hollow concentric cylinders in which the current flows in opposite directions. The magnetic field inside and outside the coaxial cable is determined by using Ampère's law. The magnetic field inside...
Electrostatic Boundary Conditions in Dielectrics
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...


