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Updated: May 10, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

通常关闭的AlGaN/GaN MIS-HEMT,具有自行调整的p-GaN门和通过Gate-First制造的非化欧姆接触

Yinmiao Yin¹, Qian Fan¹, Xianfeng Ni¹

¹Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China.

|April 26, 2025

概括

本研究介绍了增强模式化/化 (AlGaN/GaN) 金属绝缘体半导体高电子流动性晶体管 (MIS-HEMT) 的简化制造工艺. 这种新的方法提高了可制造性和设备性能.

科学领域:

半导体设备物理半导体设备物理
材料科学与工程材料科学与工程
先进的电子材料先进的电子材料

背景情况:

高性能AlGaN/GaN HEMT的制造对于功率电子非常重要.
现有的流程往往涉及复杂的步骤和挑战,以实现可靠的设备特性.

研究的目的:

为增强模式的AlGaN/GaN MIS-HEMTs开发一个简化,第一门的制造工艺.
为了实现精确的自我调整和提高可制造性.
为了提高设备的电性能.

主要方法:

利用门金属化作为电接触和蚀刻面具进行自我调整.
优化了Cl2/N2/O2感应合等离子体 (ICP) 蚀刻工艺,用于选择性p-GaN蚀刻.
开发了一种新的,非化欧姆接触形成技术,使用ICP蚀刻来创建空白.
包含一个SiNx门介电层.

主要成果:

实现了高度选择性的ICP蚀刻工艺 (33:1) 与最小的AlGaN屏障损伤.
演示了一种简化的制造工艺,结合了欧姆接触形成和梅萨隔离.
由于SiNx门介电器,观察到4.5V门电压变化.
已制造的设备表现出大门电压波动 (>10 V),高开/关电流比 (~10 ^ 7) 和明显的扣断.

结论:

拟议的第一门制造方法显著提高了AlGaN/GaN MIS-HEMT的工艺效率和可制造性.
自行调整的p-GaN门结构和新的欧姆接触形成是有效的.
开发的技术可以提高设备的性能和可靠性.

关键词:

AlGaN/GaN HEMT AlGaN/GaN HEMT HEMT 在线播放在线播放增强模式 - 增强模式第一个门的过程.金属绝缘体 - 半导体 (MIS)不经化的欧姆接触器.

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