在聚合物衍生的SiOC中,局部排序和原子尺度结构的解.
Haira G Hackbarth1, Thomas S Key2, Taren Cataldo1
1School of Chemical Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia.
ACS omega
|April 28, 2025
概括
了解氧化碳化 (SiOC) 结构是定制应用的关键. 这项研究使用先进的方法来揭示SiOC.
科学领域:
- 材料科学 材料科学 材料科学
- 陶制品 在陶方面.
- 纳米技术纳米技术
背景情况:
- 氧化碳 (SiOC) 是一种具有可调节性质的多功能陶.
- 在SiOC中阐明短到中距离的顺序是具有挑战性的,限制了精确的成分控制.
- 了解SiOC结构对于开发用户定制的应用程序至关重要.
研究的目的:
- 为了阐明在SiOC热解过程中局部化学和结构的变化.
- 了解热解温度对SiOC相位形成和排序的影响.
- 为SiOC的局部结构和纳米级异质性提供原子规模的洞察力.
主要方法:
- 使用同步射线散射和光谱技术.
- 采用随机建模来分析当地的Si-O和Si-C环境.
- 在不同温度 (2501100°C) 下研究商业SiOC聚合物前体的热解.
主要成果:
- 在250800°C的热解产生异质SiOC与无形SiO2域.
- 在1100°C,由于再分配,一个更有序的SiOC阶段具有SiC类的排序形式.
- 剩余碳相在1100°C被检测出来,并且在更高的温度下持续存在.
结论:
- 随机建模成功解了Si-O和Si-C环境,揭示了异质相.
- 热解温度显著影响SiOC相位演变和结构秩序.
- 这项工作为在SiOC材料中建立结构属性关系提供了途径.
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