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在多层次的缺陷辅助增强热电运输在sn-doped黑多晶体中

Nguyen Viet Chien¹, Hyun Min Park², Hosun Shin²

¹Faculty of Electrical and Electronic Engineering, Phenikaa University, Hanoi 10000, Vietnam.

|April 28, 2025

概括

这项研究通过使用锡 (Sn) 和引入多尺度缺陷来增强黑 (BP) 的热电特性. 这一策略通过优化载体度和导热率,显著提高了热电功率 (ZT).

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

黑 (BP) 具有窄带间隙和高西贝克系数,但电导率低和热导率高,限制了其热电应用.
开发高效的热电材料需要同时优化电气和热传输特性.

研究的目的:

为了增强黑 (BP) 多晶体的热电功率 (ZT).
调查载体度和微观结构缺陷的独立控制,以提高热电性能.

主要方法:

具有锡 (Sn) 原子的替代性化BP多晶体.
将多尺度的微观结构缺陷 (点缺陷,位移,无形相) 作为声子散射点.
描述由此产生的微观结构和热电特性.

主要成果:

在300K时,Sn兴奋剂使载体度增加到3.7 × 10^18cm^-3而不会降低Seebeck系数.
来自Sn兴奋剂的phonon杂质散射降低了导热率.
多尺度缺陷协同抑制了网格导热率从13到6.3W/m K.
实现了电子运输与格子导热率的脱.

结论:

对载体度和多尺度缺陷的独立控制显著提高了BP的热电特性.
综合策略导致热电功率 (ZT) 提升超过一个数量级.
这种方法为开发基于黑的高性能热电材料提供了有希望的途径.

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