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通过基于新型前体的热ALD合成化

Raul Zazpe^1,2, Jaroslav Charvot³, Jhonatan Rodriguez-Pereira^1,2

¹Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, Nam. Cs. Legii 565, 530 02 Pardubice, Czech Republic. raul.zazpe@upce.cz.

|April 28, 2025

概括

本研究介绍了使用热原子层沉积 (ALD) 的化 (TiP) 薄膜的首次合成. 这种新的工艺采用Tris ((trimethyltin) 化物和四化,产生富含P的TiP,其成分可调节.

科学领域:

材料科学材料科学材料科学
薄膜沉积的情况
无机化学无机化学有机化学

背景情况:

化 (TiP) 是一种材料,在电子和催化中具有潜在的应用.
原子层沉积 (ALD) 是一种用于沉积薄膜的技术,可以精确控制厚度和成分.

研究的目的:

使用热原子层沉积 (ALD) 开发一种新的化 (TiP) 薄膜合成路径.
研究ALD参数对沉积的TiP薄膜的特性和组成的影响.

主要方法:

通过热ALD使用Tris ((trimethyltin) phosphide (TMT3P) 和四化 (TiCl4) 合成TiP薄膜.
使用X射线光电子光谱 (XPS) 和电电阻测量对TiP薄膜进行表征.
优化ALD参数,包括沉积温度和前体剂量时间.

主要成果:

在175-225°C的ALD窗口内成功沉积TiP薄膜.
典型的TiP薄膜呈现出颗粒状表面和电阻在数百欧姆的电阻.
在XPS分析中,发现富含P的TiP,其成分取决于沉积温度和基质类型.

结论:

建立了一种用于TiP合成的新且有效的ALD过程.
该研究通过ALD.提供了对TiP薄膜通过ALD.增长机制和组成控制的见解.
这些发现为各种应用量身定制的TiP薄膜制造铺平了道路.

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