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在β-BiAs氧化物中探索一种新的拓绝缘体

Tamiru Teshome1

  • 1Nanotechnology Center of Excellence, Addis Ababa Science and Technology University, College of Natural and Applied Sciences, Department of Mathematics, Physics and Statistics P. O. Box 16417 Addis Ababa Ethiopia tamiru.teshome@aastu.edu.et +251966253809.

RSC advances
|April 29, 2025
PubMed
概括

研究人员发现了一种新的量子自旋霍尔绝缘体,β-BiAsO2,具有很大的室温带间隙. 这种材料对拓量子器件和灵活的电子学具有前景.

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Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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