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Updated: May 14, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

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基于二维维韦尔材料的负量子电容效应,用于坡歇斯底里斯无开关装置

Xiangyu Zeng1,2, Yang Zhang1, Jiaqi Peng1

  • 1Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.

ACS nano
|April 30, 2025
PubMed
概括

研究人员使用韦尔材料WTe2.2开发了新的场效应晶体管 (FET). 这一突破克服了博尔茨曼暴政,通过负量子电容 (NQC) 效应使电子设备的功耗降低.

关键词:
我们的Weyl材料是Weyl材料.现场效应晶体管电晶体管没有歇斯底里症的无歇斯底里症负量子电容性的负量子电容.一个的斜坡.

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