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Updated: May 13, 2025

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电子显微镜研究曲和扭曲的GaAs-InP核心纳米线中的外几何形状

Spencer McDermott1, Trevor R Smith1, Ryan B Lewis1

  • 1Department of Engineering Physics, McMaster University, L8S 4L7 Hamilton, Canada.

Nanotechnology
|April 30, 2025
PubMed
概括

不对称的外沉积导致核心外纳米线曲,使新的传感器设计成为可能. 在合成期间的晶体学定位是控制这种曲的关键,用于先进的传感器应用.

关键词:
分析断层扫描 (analytical tomography) 是一种分析断层扫描.曲的纳米线 曲的纳米线电子显微镜的电子显微镜分子光束的表达式是epitaxy.纳米线异构结构的不同结构.半导体纳米结构 半导体纳米结构应变工程是一种应变工程.

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