,使ZnOFETs

Kiyung Kim1, Sunmean Kim2, So-Young Kim1

  • 1Department of Electrical Engineering, Pohang University of Science and Technology Cheongam-ro 77, Nam-gu Pohang Gyeongbuk 37673 Republic of Korea bhlee1@postech.ac.kr.

Nanoscale advances
|May 1, 2025
PubMed
概括

三级堆通道场效应晶体管 (SCFET) 可实现多值逻辑,显著减少电路中的设备数量和功耗. 这项研究证明了它们在高效,低功耗电子应用中的潜力.

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