一个面积和功率高效的三元序列加法器,使用相位复合ZnO堆通道FETs
Kiyung Kim1, Sunmean Kim2, So-Young Kim1
1Department of Electrical Engineering, Pohang University of Science and Technology Cheongam-ro 77, Nam-gu Pohang Gyeongbuk 37673 Republic of Korea bhlee1@postech.ac.kr.
Nanoscale advances
|May 1, 2025
概括
三级堆通道场效应晶体管 (SCFET) 可实现多值逻辑,显著减少电路中的设备数量和功耗. 这项研究证明了它们在高效,低功耗电子应用中的潜力.
科学领域:
- 半导体设备物理学 半导体设备物理
- 数字逻辑设计数字逻辑设计
- 低功耗电子产品 低功耗电子产品
背景情况:
- 与二进制逻辑相比,多值逻辑具有降低电路复杂性和功耗的潜力.
- 堆通道场效应晶体管 (SCFET) 是具有可调节特性的新兴设备.
研究的目的:
- 调查使用三元SCFET实现多值逻辑电路.
- 使用SCFETs设计和模拟一个三元全相加器.
主要方法:
- 在SCFET中调节ZnO层厚度以控制设备参数.
- 基于实验性SCFET数据建模和模拟三元电路.
- 设计一个三元全相加器并分析其性能.
主要成果:
- 三级SCFETs已经成功制造和表征.
- 一个三元的完整加法器被设计使用只有12个设备,从二元等价的显著减少.
- 三元串行加法器在1V时显示出大约7fJ的具有竞争力的功率延迟产物.
结论:
- 基于SCFET的三元电路是极低功耗应用的可行和有前途的方法.
- 设备数量减少和功率效率突出显示了SCFET多值逻辑的潜力.
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