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Updated: May 13, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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基于的双源无兴奋剂线路道化FET生物传感器的模拟研究.

Junjie Huang1, Hongxia Liu1, Shupeng Chen1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China.

Nanotechnology
|May 1, 2025
PubMed
概括

我们开发了一种基于的新型生物传感器,使用无兴奋剂线道化场效应晶体管 (FET) 进行敏感的生物分子检测. 这种先进的设备为潜在的应用提供了高性能和低功耗.

关键词:
带对带的道化道.生物传感器生物传感器双源无兴奋剂线路道化FET (DS-DLLTFET) 的使用不统一的杂交方式.灵敏度分析是一种灵敏度分析.

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Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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