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Updated: May 14, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K

高性能负电容场效应晶体管与合成单层MoS2

Moonyoung Jung1, Hyo-Bae Kim2, Yungyeong Park3

  • 1Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.

ACS nano
|May 2, 2025
PubMed
概括

这项研究展示了一种新的负电容场效应晶体管 (NCFET),使用合成单层MoS2进行可靠的低压操作. 该设备实现了低于60mV/dec的下值摆动,克服了以前NCFET设计的局限性.

关键词:
铁电的哈夫环氧化氧化物.接触印的接触者负电容 负电容是指负电容.合成单层合成单层两个维的范德瓦尔斯材料.

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