基于ZrO的多层堆与Al,Y或La间层,用于SiC电源设备
Sandra Krause1, Aleksey Mikhaylov2, Uwe Schroeder3
1TU Dresden, 01062 Dresden, Germany.
ACS applied materials & interfaces
|May 2, 2025
概括
将氧化 (Al2O3) 介层整合到氧化 (ZrO2) 薄膜中,可以显著减少碳化 (SiC) 电源设备的泄漏电流. 这种Al2O3-ZrO2堆实现了高分解场和改善的介电性质.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 二氧化 (ZrO2) 是一种高k介电材料,适用于碳化 (SiC) 电源设备.
- 然而,ZrO2在较厚层中受到低分解场和高泄漏电流的影响,限制了其应用.
- 有效的介电层对于提高SiC电源设备的性能和可靠性至关重要.
研究的目的:
- 为了抑制SiC电源设备的ZrO2膜中的泄漏电流.
- 研究Al2O3,Y2O3和La2O3中间层对ZrO2介电性质的影响.
- 为了优化ZrO2基堆的介电性能,用于高压应用.
主要方法:
- 制造ZrO2薄膜与Al2O3,Y2O3或La2O3.3的薄间层相结合.
- 电气特性,包括泄漏电流测量和故障场的确定.
- 使用像X射线衍射 (XRD) 和传输电子显微镜 (TEM) 等技术分析薄膜结构和热稳定性.
- 电容-电压 (C-V) 测量以评估电荷捕获效应.
主要成果:
- 整合Al2O3,Y2O3或La2O3间层显著降低了ZrO2膜中的电荷载体传输和泄漏电流.
- Al2O3中间层显示出最显著的改善,减少了两个数量级的泄漏电流.
- 优化的Al2O3-ZrO2堆实现了7.4 MV/cm的高分解场和13.3的介电常数.
- 纳米层结构的无形性使得结晶温度提高到750°C.
- 电容-电压测量表明没有额外的电荷捕获,而优化沉积相比纯ZrO2.2,减少了50%的捕获.
结论:
- 薄的Al2O3介层有效地抑制了泄漏电流,并增强了SiC电源设备中ZrO2介电物的分解场.
- 纳米层结构的无形性质和改善的热稳定性是其卓越性能的关键.
- 这种方法为开发可靠的高k介电材料,用于先进的SiC功率电子产品提供了一个有希望的途径.
- 优化的堆表现出出色的介电特性,没有有害的电荷捕获效应.
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