记忆器加载交叉合差电压感应放大器设计,性能得到了改进
Peter Bukelani Musiiwa1, Shyam Akashe2, Govind Murari Upadhyay3
1Department of Electronic Engineering, Harare Institute of Technology, Harare, Zimbabwe.
Scientific reports
|May 2, 2025
概括
这项研究介绍了一种用于低压内存设计的新型memristor装载感觉放大器. 这种创新的电路增强了信号检测,提高了内存性能并减少了设备尺寸.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
背景情况:
- 感觉放大器对于低压内存设计至关重要,它可以增强从内存单元到外围电路的信号传播.
- 增加内存数组大小导致更高的位线容量和细胞访问阻力,导致更小的信号和更长的延迟.
- 传统的基于CMOS的感觉放大器在有效检测这些小信号方面面临着挑战.
研究的目的:
- 提出一个带有memristor的交叉合差电压感应放大器,作为CMOS设计的替代方案.
- 为了提高增益,速度,并减少高级内存系统的感觉放大器的面积大小.
主要方法:
- 设计和实施了一种新型的memristor加载交叉合差电压感应放大器.
- 拟议的基于memristor的放大器的性能与传统的基于CMOS的感觉放大器进行了比较.
主要成果:
- 装有memristor的感觉放大器展示了减少区域大小,增加增益和提高操作速度的潜力.
- 记忆器集成允许增加负载阻力,从而改善增益和更快地感知低电压波动.
- 与传统组件相比,memristors提供了减少的泄漏电流和更小的物理足迹.
结论:
- 装有memristor的感觉放大器为克服传统感觉放大器在大规模低压内存设计中的局限性提供了一个有希望的解决方案.
- 使用memristors提供了一个可调节和高效的方法来提高感觉放大器的性能,解决由小信号检测和延迟带来的挑战.
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