全金属氧化物异质连接光电子突触与多层记忆,用于人工视觉感知应用
Jo-Lin Chen1, Tsung-Che Chiang1, Po-Tsun Liu1
1Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30078, Taiwan.
Small (Weinheim an der Bergstrasse, Germany)
|May 3, 2025
概括
这项研究引入了一种用于神经形态视觉系统的新型WO3/InWZnO异质连接晶体管. 它有效模拟人类视觉记忆,并在图像识别任务中实现高精度.
科学领域:
- 材料科学 材料科学 材料科学
- 神经科学是一个神经科学.
- 电气工程 电气工程
背景情况:
- 基于金属氧化物半导体的光电子突触晶体管对于节能和稳定的神经形态计算至关重要.
- 模仿人类视觉系统需要能够模仿突触可塑性和记忆功能的设备.
研究的目的:
- 提出和研究一个新的WO3/InWZnO异质连接光电子突触晶体管.
- 展示其模拟人类视觉系统的潜力及其在神经形态视觉系统中的应用.
主要方法:
- 一个WO3/InWZnO异质连接突触晶体管的制造.
- 光学响应的表征,短期记忆 (STM) 到长期记忆 (LTM) 的转换,配对脉冲促进 (PPF) 和后增强 (PTP).
- 实现多层感知器 (MLP) 和U-Net模型用于手写数字识别和图像细分.
主要成果:
- 在650nm时实现了高光学响应度 (58.37 A W-1).
- 成功模拟了从STM到LTM的转换,并通过photogating证明了长期的多层存储.
- 在460nm光线下表现出最佳的PPF (176%) 和PTP (890%) 指数.
- 对于扭曲的手写数字,MLP模型达到了87.4%的准确度;U-Net在图像分割方面达到了74.5%的准确度.
结论:
- WO3/InWZnO异质连接突触晶体管显示了高级神经形态视觉系统的巨大潜力.
- 该设备模拟突触功能的能力以及其在图像识别和细分方面的性能突显了其可行性.
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