对半导体设备计算建模的配方和非线性解答器进行比较
Sergi Pérez-Escudero1, David Codony1, Irene Arias1,2
1Laboratori de Càlcul Numèric, Universitat Politècnica de Catalunya (UPC), Barcelona, Spain.
概括
本研究比较了用于半导体建模的两个漂移扩散配方. 分析重点是p-n连接和n-MOSFET的稳定性和计算效率.
科学领域:
- 半导体物理 半导体物理
- 计算材料科学 计算材料科学
背景情况:
- 漂移-扩散配方是半导体设备建模的标准.
- 替代配方可能在数值稳定性和效率方面提供优势.
研究的目的:
- 为了评估两个漂移-扩散配方在急剧变化的稳定性.
- 为了比较非线性解决器的计算效率和稳定性.
主要方法:
- 盖勒金有限元素离散法适用于这两种配方.
- 在真实的p-n连接和n-MOSFET设备模拟上进行的分析.
- 关于初始猜测灵敏度和速度的牛顿-拉普森和古梅尔解法器的比较.
主要成果:
- 两种配方都表现出稳定性,使用了加勒金有限元素离散.
- 另一种无维对数公式显示了可比的稳定性.
- 牛顿 - 拉普森和古梅尔的解决方法表现出不同的稳定性和效率,这取决于问题.
结论:
- 漂移扩散配方和非线性溶解器的选择会影响模拟性能.
- 准确的半导体设备建模需要仔细考虑数值方法.
- 进一步的研究可以优化这些配方用于先进的设备模拟.
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