相关实验视频

Updated: May 15, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.2K

在一个封闭单层半导体中直接测量太赫兹导电性

Su-Di Chen1,2,3, Qixin Feng1,3, Wenyu Zhao1

  • 1Department of Physics, University of California, Berkeley, California 94720, United States.

Nano letters
|May 5, 2025
PubMed
概括

研究人员开发了一种太赫兹光谱技术,用于测量二维半导体的导电性. 这种方法揭示了WSe2单层中类似德鲁德的反应,使得范德瓦尔斯异构结构的新研究成为可能.

关键词:
2D半导体是什么意思 2D半导体太赫兹光谱学 太赫兹光谱学太赫兹波导是太赫兹波导.过渡金属二二甲基化物范德瓦尔斯的异构结构是异构结构.

更多相关视频

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor07:28

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Published on: August 30, 2012

10.7K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.4K

相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
252