在基于的微空洞上的Ge和Ge-Si结构的发光特性
Xiaoyu Zhou1,2, Ziyang Zhou1, Wenqian Wu1
1College of Physics and Electronic Engineering, Hainan Normal University, Haikou, China.
PloS one
|May 5, 2025
概括
本研究详细介绍了使用激光蚀刻和脉冲激光沉积创建- (Ge-Si) 微腔的方法. 由此产生的结构在高温回火后表现出独特的发光特性,这表明光电子应用的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 光电学是指光电子产品.
背景情况:
- 微腔结构对于先进的光学设备至关重要.
- 和的整合是下一代半导体技术的关键.
研究的目的:
- 为了制造和表征涂微腔.
- 为了研究Ge-Si结构在回火后的光学特性.
主要方法:
- 在单晶上进行激光蚀刻.
- 脉冲激光沉积 (PLD) 的 (Ge) 和 (Si).
- 扫描电子显微镜 (SEM),能量分散光谱 (EDS) 和光发光 (PL) 光谱.
主要成果:
- 沉积导致了与的集群形成.
- PL光谱显示了695nm的横向光学 (TO) 声子振动.
- 化诱导了Ge-O键 (700nm峰值),而Ge-Si双层显示了Si-Si键 (940nm峰值).
结论:
- 成功制造了具有可调节光学特性的Ge涂层Si微腔.
- 通过化证明了Ge-O和Si-Si键的形成.
- 双层Ge-Si结构呈现出明显的发光峰值,为新型光电子设备铺平了道路.
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