表面工程施托基接触用于提高Al-doped ZnON薄膜晶体管的性能参数
ChienHung Wu1, Srikant Kumar Mohanty2, Rong Ming Ko3
1Department of Optoelectronics & Materials Engineering, Chung Hua University, Hsinchucity, Taiwan, Hsinchu, 30012, TAIWAN.
Nanotechnology
|May 5, 2025
概括
用添加氧化 (AlZnON) 薄膜晶体管 (TFT) 显示了通过表面工程施托基接触 (SESC) 提高性能. 这种增强对于下一代显示应用程序至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 设备工程 设备工程
背景情况:
- 薄膜晶体管 (TFT) 是电子显示器中必不可少的组件.
- 氧化物 (ZnON) 作为TFT的半导体材料具有潜力.
- 提高ZnON TFTs的电气和光学性能对于先进的应用至关重要.
研究的目的:
- 为了制造和表征AlZnON TFTs具有表面工程施特基接触 (SESC).
- 调查兴奋剂和Schottky接触特性对设备性能的影响.
- 优化SESC以提高AlZnON TFT中的电气和光学特性.
主要方法:
- 制造具有不同含量的AlZnON薄膜.
- 在ZnON通道上实施不同工作功能和宽度的Schottky接触.
- 制造的TFT的电气特征,包括移动性,下值波动和开关电流比率.
- 光学表征以确定传导率和带隙.
主要成果:
- 在ZnON中化使光学传导率提高到90%,并将带隙增加到2.48 eV,提高了可靠性.
- 一个使用高工作功能的优化SESC金 (Pt) 接触 (5.65 eV) 与宽度为通道长度的0.25倍被确定.
- 优化的SESC显著改善了场效应移动性 (27.3至43.9cm2V-1·s-1) 和开关电流比 (4.13×106至1.03×108).
- 下值摆动从196降至113mV下降-1,并且值电压从-0.13变为0.12V.
结论:
- 带有优化的SESC的AlZnON TFT表现出大大提高了性能.
- 该SESC有效地抑制掉电流,同时保持高场效移动性.
- 带有SESC的Al-doped ZnON TFT对下一代显示应用具有前景.
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