揭示了氧化在高性能P型WSe2晶体管中的兴奋机制

Hao-Yu Lan1,2, Chih-Pin Lin1,2,3, Lina Liu2

  • 1Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA.

PubMed
概括

纯氧化 (NO) 有效地对二维 (2D) 半导体,如化 (WSe2) 产生,显著降低了晶体管的接触电阻. 这一突破使未来电子产品的高性能p型2D电子设备成为可能.

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