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具有20nm以下通道长度的高性能聚合物单层晶体管

Mengmeng Li^1,2, Jiebin Niu², Xufan Li²

¹School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

Advanced materials (Deerfield Beach, Fla.)

|May 6, 2025

概括

研究人员通过缩小其厚度和通道长度,在聚合物场效应晶体管 (FET) 中取得了突破. 这使得高性能聚合物FET能够与技术相提并论,为先进的电子技术铺平了道路.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
电子工程电子工程

背景情况:

缩放策略显著提高了 (Si) 和2D材料场效应晶体管 (FET) 的性能,并降低了成本.
聚合物FET的高性能缩小规模仍然是该领域的一个重大挑战.

研究的目的:

通过组合体厚度和通道长度缩放,在聚合物FET中实现高性能.
为了证明一个聚合物单层FET,其尺寸与最先进的FET相美.

主要方法:

采用体厚缩放和通道长度缩放策略.
制造了一种2.4纳米厚的聚合物单层FET,通道长度为18纳米.
通过变化的门介电厚度研究了短通道效应,并与尺度长度理论进行了比较.

主要成果:

实现了具有18nm通道长度的聚合物FET,相当于平面Si FETs最小的技术节点.
证明了良好的操作稳定性和可靠性,当前状态的电流密度为2.4 × 10−4 A μm−1.
获得了0.79ps的高内在门延迟和109的开/关电流比.

结论:

证明了聚合物FET的成功缩小规模,实现了与技术相比具有竞争力的性能指标.
结果验证了尺度长度理论的应用,以了解聚合物FET中的短通道效应.
这种进步为高性能,低成本的基于聚合物的电子设备打开了大门.

关键词:

结合聚合物的聚合物.缩小规模的缩小规模.内在的延迟是内在的延迟.单层晶体管是一个单层晶体管.短频道短频道短频道

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