基板对二维MoS中硫空缺缺陷介导的光发光的作用2
Yiru Zhu1, Zhepeng Zhang2, Ye Wang1
1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge CB3 0FS, U.K.
概括
基质兴奋剂会影响缺陷的单层MoS2.2中的光发光. 来自SiO2的电子兴奋剂灭了排放,而HfO2允许它,突出了基质对缺陷状态的影响.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 过渡金属二二二烯化物中的 vacancy 缺陷会产生 in-gap 状态.
- 这些状态捕获刺激子,使缺陷介导光发光 (PL) 成为可能.
- 了解缺陷行为对于光电子应用至关重要.
研究的目的:
- 调查介电基质兴奋剂对单层MoS2.2中缺陷介导的PL的影响.
- 确定硫空缺在PL排放中的作用.
- 与PL火和回收相关联基质特性.
主要方法:
- 在室温下进行光发光 (PL) 光谱学.
- 拉曼光谱法 拉曼光谱法
- 同步龙X射线光电谱学 (XPS).同步龙X射线光电谱学.
- 取决于门的PL测量.
主要成果:
- 在MoS2中的硫空缺的室温PL对基质兴奋剂敏感.
- 在HfO2上观察到PL,但由于电子兴奋剂,在SiO2上被灭.
- 拉曼和XPS证实了MoS2在SiO2.2上的电子兴奋剂.
- 化SiO2恢复了PL排放,表明了表面状态的改变.
结论:
- 基质诱导的电子兴奋剂显著影响MoS2.2中硫空位介导的PL.
- 过量的电子填充缺陷状态,减少PL发射概率.
- 介电基板的表面工程可以调整缺陷介导的光学特性.
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