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关于在V-Al合金电子束化过程中清除杂质的行为调查

Zixin Yang^1,2,3, Shuaishuai Wu^1,2,3, Shengli Guo^1,2,3

¹State Key Laboratory of Nonferrous Structural Materials, China GRINM Group Co., Ltd., Beijing 100088, China.

Materials (Basel, Switzerland)

|May 7, 2025

概括

电子束融有效地从V-Al合金中去除 (Al) 等挥发性杂质. 然而, (Si) 和 (W) 等元素很难去除,并且可以在过程中缩.

科学领域:

材料科学与工程材料科学与工程
金工业是金工业的一个方面.
添加剂制造添加剂制造添加剂制造

背景情况:

电子束化 (EBM) 是一种先进的增材制造技术.
控制杂质水平对于V-Al合金的性能至关重要.
在EBM过程中了解杂质行为对于过程优化至关重要.

研究的目的:

系统地调查V-Al合金在EBM过程中去除杂质的情况.
分析各种杂质元素的热力学行为和迁移模式.
为了识别有效去除的元素和那些在化过程中缩的元素.

主要方法:

使用了感应合等离子体 (ICP),发光放电质谱 (GDMS),扫描电子显微镜 (SEM),电子探头微分析 (EPMA) 和传输电子显微镜 (TEM).
根据热力学原理计算杂质元素的和蒸气压和蒸发系数.
在V-Al合金和纯化样本中分析了组成含量和微观元素分布.

主要成果:

蒸发系数> 1 (Al,Fe,Co,Ni,Cr,Ti) 的元素被有效地去除,降低了它们的度.
蒸发系数小于1的元素 (Si,Mo,Nb,W) 难以去除,并且由于缩而增加度.
Al迁移到高温的表面层,而Si,C和O显示出双向迁移. 碳与 (V) 反应形成V₂C,阻碍了其去除.

结论:

在EBM过程中,可以选择性地从V-Al合金中去除挥发性杂质.
热力学特性 (蒸发系数) 决定了杂质的可移除性.
特定的杂质行为,如Al表面丰富和V2C形成,对通过EBM实现超高纯度V-Al合金提出了挑战.

关键词:

电子束化的融化过程高纯度的瓦纳.杂质迁移的杂质迁移是指杂质的迁移.热力学计算的热力学计算

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