埋藏超薄氧化物的Subangstrom离子束工程用于可扩展的量子计算
Nikita S Smirnov1,2, Elizaveta A Krivko1,2, Daria A Moskaleva1,2
1Shukhov Labs, Quantum Park, Bauman Moscow State Technical University, Moscow 105005, Russia.
Science advances
|May 7, 2025
概括
聚焦离子束辐射精确设计超薄膜,用于先进的计算. 这种方法实现了原子规模的控制,增强了约瑟夫森交叉阻力和超导量子比特性能.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 量子计算是一种量子计算.
背景情况:
- 多层纳米系统对于下一代计算技术至关重要.
- 实现对超薄膜的原子级控制,特别是埋藏的层,带来了重大挑战.
研究的目的:
- 引入一种新的,互补的金属氧化物半导体 (CMOS) 兼容的方法,用于设计埋藏的超薄膜.
- 为了证明使用聚焦离子束 (FIB) 辐射来控制亚电流的厚度.
主要方法:
- 利用聚焦离子束 (FIB) 辐射来精确修改埋藏的超薄膜.
- 采用分子动力学 (MD) 模拟来了解离子诱导的晶体缺陷的作用.
- 制造并测试了约瑟夫森连接器和超导多量子比特处理器.
主要成果:
- 在超薄膜中实现了亚斯特罗姆厚度控制.
- 证明了约瑟逊连接电阻调节在2%至37%之间,标准偏差低 (0.86%).
- 在超导多量子比特处理器中启用±17 MHz频率精度,与±0.172安格斯特罗姆厚度变化相关.
- 报告的量子比特能量放松和回声相干时间超过0.5毫秒.
结论:
- FIB辐射为超薄膜的原子规模工程提供了一个可行的CMOS兼容的途径.
- 这种技术显著提高了用于量子和先进计算应用的设备的性能和控制.
- 对道屏障厚度的精确控制对于优化超导装置参数至关重要.
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