假间隙和费米弧由费米表面嵌套在一个中心对称的斯基米子磁体中引起
Yuyang Dong1, Yuto Kinoshita1, Masayuki Ochi2,3
1Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, Japan.
概括
这项研究揭示了GdRu2Si2等中心对称材料中 skyrmion形成的机制. 它揭示了电子结构和Ruderman-Kittel-Kasuya-Yosida相互作用如何推动潜在数据存储应用的磁调制.
科学领域:
- 凝聚物质物理学
- 材料科学
- 机器人
背景情况:
- 由于Dzyaloshinskii-Moriya相互作用,通常在非中心对称材料中观察到skyrmions.
- 在中心对称材料中,斯基米子的形成机制尚不清楚.
- GdRu2Si2是一个中心对称的材料,其中有兴趣的 skyrmion 形成.
研究的目的:
- 研究中心对称GdRu2Si2的电子结构.
- 为了阐明该物质中斯基米昂形成的机制.
- 为了探索GdRu2Si2的磁性特性.
主要方法:
- 用角度分辨率光辐射光谱 (ARPES) 来测量磁域的电子结构.
- 使用共振X射线散射数据进行比较.
- 使用磁场和温度循环来操纵磁场.
主要成果:
- 观察到强大的费米表面 (FS) 嵌套,与磁调节一致.
- 在嵌套的FS部分形成一个伪间隙,随磁域变化而变化.
- 这种伪间隙创造了具有双重对称性的费米弧,表明了鲁德曼-基特尔-卡苏亚-约西达 (RKKY) 相互作用在旋转调制中的作用.
- 在GdRu2Si2中的磁域被证明是灵活的和可控制的.
结论:
- 鲁德曼-基特尔-卡苏亚-约西达 (RKKY) 相互作用对于中心对称的GdRu2Si2中螺旋旋调制和斯基米子形成至关重要.
- 观察到的电子结构,包括费米表面嵌套和伪间隙形成,解释了斯基米子的行为.
- GdRu2Si2具有可调节的磁性,这表明它有可能用于数据存储和处理设备.
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