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Updated: May 12, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

的方向可以生长半极的AlNN

Ji-Li Li¹, Ye-Fei Li², Zhi-Pan Liu^3,4

¹State Key Laboratory of Porous Materials for Separation and Conversion, Collaborative Innovation Center of Chemistry for Energy Material, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Key Laboratory of Computational Physical Science, Department of Chemistry, Fudan University, Shanghai, 200433, China.

Nature communications

|May 9, 2025

概括

在 (Si) 上开发高质量的非极性化 (GaN) 用于LED是具有挑战性的. 使用分级Si(320) 基板可以实现高质量的半极化 (AlN) 增长,减少极化并改善热导电性.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
纳米技术纳米技术

背景情况:

在发光二极管 (LED) 的 (Si) 基板上种植非极性化 (GaN) 面临着由于格子不匹配的挑战.
化 (AlN) 层被用作缓冲器,但极性AlN(0001) 的增长占主导地位,阻碍了设备的性能.

研究的目的:

为了研究使用分阶段Si(320) 基板来进行高质量的半极性AlN生长.
为了确定界面配置,以减轻格子不匹配,并改善基于GaN的LED的热性能.

主要方法:

基于机器学习的结构预测,探索数百万个接口配置.
分析原子匹配,接口能量,极化和接口热导电.

主要成果:

渐进的Si320基板促进了高质量的半极AlN22的生长.
由此产生的接口表现出原子匹配和低接口能量.
实现了偏振降低 (0.20 C/m2) 和优越的界面导热率 (0.47 GWm-2K-1).

结论:

阶段性Si320基板为Si上高质量的非极性GaN生长提供了有希望的途径.
展示的接口属性对于推进基于GaN的LED技术至关重要.

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