基于低成本128°Y LiNbO3/SiO2/多Si/Si基板的SV-SAW射频过器,用于6G cmWave无线通信
Kai Yang1,2, Jie Chen1, Juan Wang1,3
1School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230088, China.
Microsystems & nanoengineering
|May 9, 2025
概括
本研究介绍了基于的表面声波 (SAW) 技术,用于6G无线通信中的高性能射频 (RF) 过器. 这种新的设计使得X频段应用的紧型,低成本的SAW过器成为可能.
科学领域:
- 微波声学 微波声学 微波声学
- 材料科学 材料科学 材料科学
- 无线通信无线通信
背景情况:
- 移动通信需要更快的数据速率,需要更高的频率和先进的射频过器.
- 微声波共振器提供优势,如低损耗和紧的尺寸,用于移动电话过.
- 现有的解决方案在高频段的成本和性能方面面临挑战.
研究的目的:
- 介绍一个基于基板的表面声波 (SAW) 技术平台.
- 为6G X频段 (7-12 GHz) 厘米波 (cmWave) 无线通信提供高性能共振器和过器.
- 为满足对低成本,紧,高性能过器解决方案的需求.
主要方法:
- 提出了一个新的设计方案,以激发剪切垂直表面声波 (SV-SAW).
- 在基板上使用了128°Y LiNbO3/SiO2/多Si/Si层堆.
- 制造和特征高频共振器和合成过器.
主要成果:
- 实现了6 GHz以上的高频共振器,具有高电机学合 (k: 7.6%-8.9%) 和质量因素 (Q: 193-679).
- 合成过器显示了低插入损失 (1.47-2.20 dB) 和3dB带宽 (308-373 MHz).
- 8.63GHz的过器显示了该行业领先的低插入损失 (1.5dB) 对于这个范围内的LiNbO3过器,具有良好的带外排斥.
结论:
- 基板SAW技术平台为6G cmWave通信提供了高性能共振器和过器.
- 展示的过器为微波声学领域提供了重大进步.
- 这项技术为未来的无线系统铺平了固体安装,低成本和微型SAW过器的道路.
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