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抑制体量子点多元聚变导致高性能 InSb 红外光探测器

Lucheng Peng¹, Yongjie Wang¹, Carmelita Rodà¹

¹ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|May 9, 2025

概括

环保的抗氧化物 (InSb) 体量子点 (CQD) 光探测器显示出商业上的前景. 抑制带尾陷状态显著提高了它们在短波红外应用中的性能.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
光电学是指光电子产品.

背景情况:

抗氧化物 (InSb) 体量子点 (CQD) 为短波红外 (SWIR) 光探测器提供低成本,可扩展和CMOS可集成的解决方案.
当前的InSb CQD光探测器表现出性能限制,阻碍了商业可行性.

研究的目的:

调查CQD融合在形成带尾陷状态中的作用.
为了证明缓解这些陷状态对于提高设备性能至关重要.
为了实现高性能的 InSb CQD SWIR 光探测器.

主要方法:

制造具有被抑制的带尾陷状态的InSb CQD.
在InSb CQD中表面缺陷的被动化.
光探测器性能指标的表征.

主要成果:

实现了创纪录的低暗电流,为4μA cm-2.2.
证明了在-1V下≈20%的外部量子效率 (EQE) 和在零偏差下高EQE.
报告了超过140 dB的线性动态范围和90 ns的响应时间.
在InSb/InP CQDs中获得了10%的光发光量子收益率 (PLQY).

结论:

避免带尾陷状态对于高性能InSb CQD SWIR光探测器至关重要.
开发的InSb CQD显示了令人信服的指标,包括与以前的报告相比,暗电流减少了10倍以上.
高的PLQY和EQE证实了通过缺陷抑制和被动化成功制造高质量的InSb CQD.

关键词:

在 InSb 中带尾国家带尾国家摄影探测器是一种光检测器.量子点是一个量子点.短波红外线是一种短波红外线.

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