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Updated: May 14, 2025

Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics

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Published on: August 5, 2020

Piezoresponse在WO₃薄膜中增强了Pt-纳米粒子,由原子探头断层扫描和Cs传输电子显微镜揭示

Pamela M Pineda-Domínguez¹, Torben Boll^1,2,3, Abel Hurtado-Macias⁴

¹Institut für Angewandte Materialien-Werkstoffkunde (IAM-WK), Karlsruhe Institute of Technology, Engelbert-Arnold-Strasse 4, Karlsruhe 76131, Germany.

|May 12, 2025

概括

的和化会在三氧化物 (WO3) 薄膜中产生压电效应. 这种结构修改导致了独特的压电领域,其测量系数为97 ± 6 pmV-1.1.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
纳米技术纳米技术

背景情况:

三氧化物 (WO3) 是一种内在的n型半导体.
在WO3中,可以通过兴奋剂和热处理来设计Piezoresponse.

研究的目的:

为了研究合的WO3薄膜中的压力反应.
为了将结构修改与压电性质相关联.

主要方法:

用于薄膜沉积的射频/直流共.
在600°C下进行后沉积化.
切换光谱压力力显微镜 (SS-PFM) 用于压力响应测量.
用X射线衍射 (XRD),扫描传输电子显微镜 (STEM) 和原子探测器断层扫描 (APT) 进行结构分析.

主要成果:

在用Pt合的WO3薄膜中证明了压电反应,其压电系数 (d33) 为97 ± 6 pmV-1.1.
确定了一种正方体结构 (β-WO3) 和立方纳米粒子 (∼5 nm).
观察到 Pt 纳米粒子和 Ar 丰富的腔由化诱导,产生格子应变.

结论:

结构修改,包括Pt纳米粒子和Ar腔的形成,诱导WO3中的晶格应变.
这种应变导致了带有不同极化方向的压电领域的发展.
该研究强调了一种增强WO3薄膜压电特性的方法.

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