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Updated: May 14, 2025

A Method to Manipulate Surface Tension of a Liquid Metal via Surface Oxidation and Reduction
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A Method to Manipulate Surface Tension of a Liquid Metal via Surface Oxidation and Reduction

Published on: January 26, 2016

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通过多层结构通过金属氧化物金属设备的原子层沉积辅助接口工程,以改善泄漏特性

Zhao-Cheng Chen1, Hao-Jung Liu2, Yu-Chi Chang2

  • 1Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan.

ACS omega
|May 12, 2025
PubMed
概括

研究人员开发了多层金属/绝缘体/金属设备,大大减少了非状态电流. 调节原子层沉积条件控制基组形成,影响先进电子设备的电荷转移.

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Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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