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Updated: May 22, 2025

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
08:58

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation

Published on: December 21, 2015

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氧气空隙诱导 2D Bi2SeO5 1T1R集成的非挥发性记忆器

Tingting Guo1, Zhidong Pan2, Yehui Shen3

  • 1MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.

Nano letters
|May 12, 2025
PubMed
概括

高晶度的2D Bi2SeO5纳米板可以提高memristor的性能. 氧气空缺诱导的memristors显示出优异的非易失性特性,为先进的计算系统铺平了道路.

关键词:
1T1RR 是一个很好的方法.这是一个Bi2SeO5记忆器.氧气空缺的地方.这是二维材料的二维材料.

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