在神经形态计算中用于模拟突触的CMOS兼容的质子三终端memristor.
Lingli Liu1, Putu Andhita Dananjaya1, Eng Kang Koh1
1School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
Small methods
|May 13, 2025
概括
本研究介绍了一种新型的CMOS兼容三终端记忆器 (H-3TM),可以克服保留和制造方面的挑战. 这种新设备利用质子互来实现高性能,使先进的人工突触应用成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 全固态无机三终端记忆器 (H-3TMs) 面临的挑战包括不良的保留,环境敏感性和复杂的制造.
- 现有的H-3TM不易使用标准造工艺制造,这限制了它们的实际应用.
研究的目的:
- 开发一个CMOS兼容的H-3TM,解决现有设备的局限性.
- 为了在现有的造工艺中实现可制造性,并提高设备性能.
主要方法:
- 使用SiNx电解质和WOx通道之间的可逆质子间隔制造H-3TM.
- 通过等离子处理引入质子,以实现CMOS兼容性和后端集成.
- 设备特征的实验和模拟分析,包括保留,线性,导电状态,能量消耗和设备对设备的变化.
主要成果:
- 开发的H-3TM由于电解质/通道接口的低质子传输而表现出高的保留性能,而无需电场.
- 该设备展示了线性增强/减压,512个电导状态,≈40的动态范围和低能耗运行 (每写≈73 fJ).
- 实现了优异的设备对设备的统一性,在MNIST和Fashion-MNIST数据集上评估了模拟属性,显示了接近理想基准的准确性.
结论:
- 这项工作介绍了一个可行的CMOS兼容的H-3TM,使用简单的等离子处理制造.
- 该设备的强大性能和可制造性为设计和制造未来的人工突触器件提供了有前途的方法.
- 这项研究突出了质子合记忆器在先进计算应用中的潜力.
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