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Updated: Jul 16, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Published on: January 19, 2018

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紧型非挥发性可重新配置模式转换器由Sb2S3嵌入到4H-碳化在绝缘体平台中

Danfeng Zhu1, Junbo Chen1, Shaobin Qiu1

  • 1Meizhou Intelligent Photoelectric Detection Application Engineering Technology Research Center, School of Physics and Electrical Engineering, Jiaying University, Meizhou 514015, China.

Nanomaterials (Basel, Switzerland)
|May 13, 2025
PubMed
概括

本研究介绍了一个紧的非挥发性可重新配置模式转换器在一个4H-碳化在绝缘体平台上. 它使用相变材料高效地转换光学模式,使先进的集成光学成为可能.

关键词:
4H-SiC 4H-SiC 是一个在Sb2S3S3中使用.非挥发性的切换开关.阶段变换材料的相变材料.可以重新配置的模式转换转换.

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

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