准射线追踪方法用于在带电粒子系统中的库伦相互作用估计
Mingkang Wang1, Weiming Ren1, Zizhou Gong1
1CSIM Group, ASML-HMI, 80 W Tasman Dr, San Jose, CA 95134, USA.
概括
一种新的准射线追踪方法准确地估计了带电粒子成像系统中的库伦相互作用 (CI) 效应. 这种更快的模拟方法有助于优化扫描电子显微镜 (SEM) 设计,而不会牺牲精度.
科学领域:
- 物理 物理学 物理
- 材料科学 材料科学 材料科学
- 工程 工程师 工程师 工程师
背景情况:
- 库伦相互作用 (CI) 在带电粒子成像系统中显著降低分辨率.
- 扫描电子显微镜 (SEM) 中的高探针电流放大了CI诱导的分辨率损失.
- 现有的CI估计方法缺乏速度和准确性之间的平衡,阻碍了SEM设计优化.
研究的目的:
- 在带电粒子成像中开发一种新,高效和准确的估计库伦相互作用 (CI) 的方法.
- 克服当前CI估计技术的速度和精度限制.
- 通过改进的CI分析,促进SEM设计参数的优化.
主要方法:
- 提出了一种利用扰动理论的准射线追踪方法.
- 采用蒙特卡洛射线追踪来模拟CI诱导的轨迹移位和Boersch效应.
- 消除了在传统的直接光线追踪中发现的代解决方案的需求.
主要成果:
- 实现了比直接光线追踪速度快105倍以上的模拟速度.
- 与直接光线追踪相比,证明了不到1%的误差率.
- 在广泛的参数中验证了与SEM应用相关的性能.
结论:
- 准射线追踪方法为CI估计提供了快速而准确的解决方案.
- 这种方法显著提高了优化带电粒子成像系统的效率.
- 在各种电子显微镜应用中提供了解决CI效应的通用化工具.
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