高速和宽带的InGaAs/InP光电极与InGaAsP等级的带隙层
Guohao Yang1,2,3, Tianhong Liu1,2,3, Jinping Li1,2
1Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences, Changchun 130033, China.
Sensors (Basel, Switzerland)
|May 14, 2025
概括
这项研究开发了一种使用InGaAs和InAlAs的高速光二极管,用于850-1550nm的宽带传感. 新的设计提高了灵敏度和速度,用于先进的光学检测和通信.
科学领域:
- 光电学是指光电子产品.
- 半导体设备物理 半导体设备物理
背景情况:
- 光二极管对于光学检测至关重要,但宽带性能和高速响应仍然具有挑战性.
- 现有的设计通常面临在较短波长的灵敏度和高频率的信号完整性的局限性.
研究的目的:
- 开发一款用于光学传感和检测的高速宽带光二极管.
- 为了提高设备的灵敏度,响应性和可靠性,在850-1550nm波长范围内.
主要方法:
- 使用InAlAs窗口层制造一个InGaAs/InP光二极管.
- 整合InGaAsP分级带隙层 (GBL) 以尽量减少与缺陷相关的损失.
- 用InGaAs替代GaAs的材料,以改善性能指标.
主要成果:
- 实现了20 GHz (850 nm),15 GHz (1310 nm) 和15.5 GHz (1550 nm) 的高带宽.
- 已证明的响应度为0.5 A/W (850 nm),0.72 A/W (1310 nm) 和0.64 A/W (1550 nm) 的电流.
- 由于InAlAs窗口层,在850nm时显著提高灵敏度.
结论:
- 开发的光二极管为多波长光学传感提供了卓越的性能.
- 该设备适用于高速光通信平台和宽带光子传感器.
- 材料工程策略有效地提高了光二极管的灵敏度,速度和可靠性.
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