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Updated: May 15, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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解决方案处理的金属氧化物薄膜晶体管的稳定性改进,使用化添加氧化介电

Haoxuan Xu1, Bo Deng1, Xinan Zhang1

  • 1Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.

Materials (Basel, Switzerland)
|May 14, 2025
PubMed
概括

用添加的氧化 (ZrO2) 介电剂提高了薄膜晶体管 (TFT) 的稳定性. 这种溶液加工材料减少了缺陷,提高了下一代金属氧化物电子产品的性能.

关键词:
ZrO2 介电电离子电气性能 电气性能 电气性能含有的化物添加剂.薄膜晶体管是一种薄膜晶体管.

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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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