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Updated: May 15, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.1K

关于Sn度对非替代性缺陷度和GeSn合金中Sn表面分离Sn度影响的研究

Zihang Zhou1, Jiayi Li2,3, Mengjiang Jia1

  • 1School of Applied Science, Beijing Information Science and Technology University, Beijing 102206, China.

Molecules (Basel, Switzerland)
|May 14, 2025
PubMed
概括

在- (GeSn) 合金中,高 (Sn) 度对于基于的光源至关重要. 这项研究阐明了表面分离是如何由非替代性缺陷 (VSnV) 驱动的,指导材料生长和设备性能.

关键词:
在 GeSn 合金中.能量形成的能量形成.非替代性的 Sn 缺陷替代性的 Sn Sn Sn 替代性的表面分离的表面分离.

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