2D多层MXenes的非传统旋转轨道扭矩用于未来的非挥发性磁性记忆
Prabhat Kumar1, Yoshio Miura1,2, Yoshinori Kotani3
1Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki, 305-0047, Japan.
Small (Weinheim an der Bergstrasse, Germany)
|May 15, 2025
概括
研究人员开发了一种新的旋转轨道扭矩 (SOT) 装置,使用2D MXene材料Cr2N,为先进的磁性内存应用实现无磁场磁化切换.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- MXenes是具有多种功能的2D材料,吸引了大量的研究兴趣.
- 探索MXenes在电子设备,特别是磁性内存中的新应用是至关重要的.
研究的目的:
- 开发一种使用MXene (Cr2N) 的新型旋转轨道扭矩 (SOT) 双层结构,以在超高集成磁性内存中潜在使用.
- 在这个新的材料系统中研究无电场电流诱导磁化切换背后的机制.
主要方法:
- 使用磁铁喷射制造基质//Cr2N/[Co/Pt]3/MgO双层结构的制造.
- 实验演示无场电流诱导磁化开关.
- 预测电子属性的第一原则计算.
- 用X射线磁圆二元化 (XMCD) 探测界面磁矩.
主要成果:
- 在Cr2N/[Co/Pt]3异构中证明了无场电流诱导的磁化切换,独立于相对于Cr2N晶体对称性的电流方向.
- 观察到随着Cr2N厚度增加SOT效率.
- 第一个原则的计算预测了Cr2N中占主导地位的外平面轨道-霍尔导电性.
- XMCD揭示了Cr在Cr2N/Co接口上引起的Cr外平面磁矩.
结论:
- 这项研究强调了2D MXene材料在先进的自旋电子设备中的潜力.
- 非传统的外平面SOT归因于大量Cr2N的内在轨道-霍尔效应和像自旋过这样的界面效应.
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