用相位阵列方法生成引导波并使用V(z) 方法提取相位速度
Michaël Lematre1, Marc Lethiecq1
1GREMAN Laboratory, CNRS - UMR 7347, Université de Tours / INSA CVL, Blois, France.
Ultrasonics
|May 16, 2025
概括
阶段阵列传感器可以有效地替代单元传感器的V (z) 方法,使准确的引导波速测量材料的特征. 仔细的参数选择确保了异型基质的稳定V(z) 曲线.
科学领域:
- 材料科学 材料科学 材料科学
- 声学 声学 在声学方面
- 非破坏性测试 不破坏性测试
背景情况:
- 对于从引导波速来确定材料弹性常数而言,V(z) 方法至关重要.
- 经典的单元传感器限制了V (z) 方法的灵活性和适用性.
- 阶段阵列传感器在产生和检测声波方面具有潜在的优势.
研究的目的:
- 通过V (z) 方法研究使用相位阵列传感器的可行性.
- 分析在V (z) 测量中使用阶段阵列传感器的好处和必要的预防措施.
- 探索阶段阵列参数对引导波生成和检测的影响.
主要方法:
- 开发一个模型,用于V(z) 声学特征,使用阶段阵列传感器.
- 对于聚焦的声场产生,应用延迟定律.
- 在异型基板上分析分相阵列参数 (元素数,焦距,频率).
主要成果:
- 通过相位阵列传感器成功生成和检测V(z) 曲线,类似于聚焦传感器.
- 阐述了阶段阵列参数对各种声波 (SAW,PSAW,SSQW) 的生成和检测的影响.
- 用阶段阵列传感器验证了V(z) 方法,用于表征异性质材料.
结论:
- 阶段阵列传感器是单元传感器的可行替代品,用于V (z) 方法.
- 优化阶段阵列参数和频率对于稳定和准确的V (z) 测量至关重要.
- 这种方法提高了在异型材料中从引导波速推断弹性常数的能力.
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