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在化学蒸汽沉积反应堆中的增长的数值研究

Yafeng Wang^1,2, Lipei Peng^2,3, Yongdi Zhao⁴

¹School of Chemical Engineering and Technology, Key Laboratory for Green Chemical Technology of Ministry of Education,Tianjin University, Tianjin 300072, China.

|May 19, 2025

概括

为生长优化化学蒸气沉积 (CVD) 需要仔细控制基板温度和质量流速. 这些参数对先进应用的沉积率和均性有重大影响.

科学领域:

材料科学材料科学材料科学
化学工程是化学工程的重要组成部分.
薄膜沉积的情况

背景情况:

化学蒸汽沉积 (CVD) 对于生产高质量的膜至关重要.
了解操作参数是控制存储率和统一性的关键.
之前的研究强调了心血管疾病过程的复杂性.

研究的目的:

综合研究生长的CVD过程.
调查关键操作参数对存储率和统一性的影响.
为了优化CVD参数,提高膜质量.

主要方法:

反应堆流量和温度场的数值模拟.
参数优化的直角测试方法.
分析基板温度,质流率,进气温度,H2/WF6摩尔比率和工作压力.

主要成果:

基质温度和质量流速对于沉积率至关重要.
较高的基板温度和质量流速增强了的生长.
确定了最佳的参数组合,以最大限度地提高沉积率和均性.
基质温度主要影响均性,而质量流速影响沉积率.

结论:

这项研究为优化的CVD过程提供了宝贵的见解.
这些发现可以指导提升高膜质量,用于先进的应用.
控制特定参数对于可预测和高质量的沉积至关重要.

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