在电子束光刻中使用电子散射能量分布的复合函数模型进行近距离效应校正
Qingyuan Mao1,2,3, Jingyuan Zhu4,5,6, Xinbin Cheng7,8,9,10
1Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
Discover nano
|May 19, 2025
概括
一个新的复合模型准确地计算了电子散射点扩散函数,用于电子束光刻的近距离效应校正. 这种方法提高了高分辨率模式的计算效率和准确性.
科学领域:
- 材料科学和纳米技术材料科学和纳米技术
- 物理 物理学 物理
背景情况:
- 电子束光刻 (EBL) 对于高分辨率的图案设计至关重要.
- 电子散射会导致近距离效应,限制EBL分辨率.
- 目前的近距离效应校正 (PEC) 方法在准确性和计算成本方面扎.
研究的目的:
- 开发一种新的,计算效率高,准确的方法,用于EBL的近距离效应校正.
- 改进电子散射的点扩散函数 (PSF) 的计算.
主要方法:
- 开发了一个复合PSF模型,将功率函数 (前向散射) 和高斯函数 (反向散射) 结合起来.
- 该模型使用PEC的BEAMER软件进行了验证.
- 性能与蒙特卡洛和双高斯模型进行了比较.
主要成果:
- 复合模型在PSF计算中实现了高精度.
- 使用复合模型的PEC成功地模拟了30纳米外环宽的丝素 (HSQ) 区域板.
- 与传统方法相比,该模型显示出更高的校正性能.
结论:
- 复合PSF模型为PEC提供了准确性和计算效率的平衡.
- 这种方法适用于高分辨率EBL和复杂的纳米结构,如元表面和元镜头.
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