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Updated: May 23, 2025

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模拟二维碳化薄膜的机械性能,其中空缺缺陷分布于随机分布

Aihua Ma1, Jing Wang1

  • 1Xinjiang Key Laboratory of Solid-State Physics and Devices, College of Physics Science and Technology, Xinjiang University, Urumqi, 830017, People's Republic of China.

The Journal of chemical physics
|May 22, 2025
PubMed
概括

二维碳化 (2D-SiC) 薄膜的机械性能主要受到温度和缺陷度的影响,而不是薄膜大小或缺陷类型. 更高的缺陷度和温度显著降低了2D-SiC薄膜的质量.

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