一个多通道可穿戴的传感贴片,基于门周围全方位场效应晶体管
Zhe Xing1,2, Qiang Liu2,3, Bo Lin1,2
1State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. wuzhx@mail.sim.ac.cn.
Lab on a chip
|May 28, 2025
概括
这项研究引入了一个可穿戴的传感器贴片,使用先进的场效应晶体管 (FET) 来检测多个生物标志物. 灵活的设计允许通过多种生物标志物检测进行全面的健康监测.
科学领域:
- 材料科学 材料科学 材料科学
- 生物医学工程 生物医学工程
- 电子 电子 电子 电子 电子 电子 电子
背景情况:
- 现场效应晶体管 (FET) 由于其灵敏度而被研究用于生物标志物检测.
- 刚性基板和大传感器区域限制了基于FET的可穿戴,多通道传感器的发展.
研究的目的:
- 开发一种可穿戴的多通道传感器贴片,用于全面的健康监测.
- 克服基于FET的可穿戴传感器中刚性基板和大面积的局限性.
主要方法:
- 整合门周围场效应晶体管 (GAA FET) 进入柔性印刷电路板 (FPCB) 补丁.
- 利用GAA FET和FPCB电极的电特性进行多生物标志物检测.
主要成果:
- 展示了一个可穿戴的EGFET传感器阵列补丁,具有增强的灵活性和小尺寸.
- 成功检测了多种生物标志物,包括葡萄糖,乳酸盐,Na+,K+和Ca2+.
结论:
- 开发的可穿戴补丁可以促进基于FET的多通道传感器阵列.
- 这项技术显示了实现全面可穿戴健康监测系统的潜力.
相关概念视频
Field Effect Transistor
582
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
582
MOSFET
593
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
593
Patch Clamp
5.8K
Many fundamental cell functions such as muscle contraction and nerve transmission rely on the electrical signals produced by the movement of positively and negatively charged ions across the cell membrane. One competent method to record current flowing across the whole cell or single ion channel is the patch-clamp technique.
In this method, a glass micropipette containing electrolyte solution is tightly sealed against a small portion of the cell membrane. As a result, a patch of the cell...
In this method, a glass micropipette containing electrolyte solution is tightly sealed against a small portion of the cell membrane. As a result, a patch of the cell...
5.8K
Biasing of FET
374
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
374
Characteristics of MOSFET
510
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
510
MOSFET: Enhancement Mode
493
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
493


