Jove
Visualize
联系我们

相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

943
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
943
Fermi Level Dynamics01:12

Fermi Level Dynamics

356
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
356
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

526
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
526
P-N junction01:11

P-N junction

701
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
701
Fermi Level01:18

Fermi Level

848
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
848
Deactivation Processes: Jablonski Diagram01:25

Deactivation Processes: Jablonski Diagram

935
Luminescence, the emission of light by a substance that has absorbed energy, is a process that involves the interaction of molecules with light. The energy-level diagram, or Jablonski diagram, is a graphical representation of these interactions, illustrating the various states and transitions a molecule can undergo. In a typical Jablonski diagram, the lowest horizontal line represents the ground-state energy of the molecule, which is usually a singlet state. This state represents the energies...
935

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Controlled Chemical Synthesis of Color Centers in Nanocrystalline Silicon Carbide.

Nanomaterials (Basel, Switzerland)·2026
Same author

High-Yield Engineering and Identification of Oxygen-Related Modified Divacancies in 4H-SiC.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Experimental Observation of Spin Defects in the van der Waals Material GeS<sub>2</sub>.

Nano letters·2025
Same author

A coherence-protection scheme for quantum sensors based on ultra-shallow single nitrogen-vacancy centers in diamond.

Nature communications·2025
Same author

Non-invasive bioinert room-temperature quantum sensor from silicon carbide qubits.

Nature materials·2025
Same author

Recent Advances in the Synthesis, Optical Properties, and Applications of Fluorescent Silicon Carbide Quantum Dots.

Small science·2025
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关实验视频

Updated: Sep 20, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.0K

固态缺陷发射器没有电活动

Pei Li1,2,3, Song Li2,3, Péter Udvarhelyi3,4,5

  • 1School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|May 28, 2025
PubMed
概括
此摘要是机器生成的。

半导体中的某些点缺陷可以在不影响电导率的情况下具有光学活性. 这挑战了所有此类缺陷都会改变材料性能的常见假设,揭示了一种新的光学功能,电气惰性的缺陷类别.

关键词:
第一个原则是计算计算.光学过渡的光学过渡.点缺陷是指点上的缺陷.碳化是碳化的重要组成部分.单个光子发射器发射器

更多相关视频

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.3K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.9K

相关实验视频

Last Updated: Sep 20, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.0K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.3K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.9K

科学领域:

  • 固态物理 固态物理
  • 材料科学是一种材料科学.
  • 半导体物理 半导体物理

背景情况:

  • 半导体中的点缺陷可以在带隙内引入能量水平,影响电气和光学性能.
  • 人们普遍认为,半导体中的光学活性缺陷也会改变材料的导电性.
  • 缺陷水平通常会降低光学刺激能量值,将光学活动与电气变化相关联.

研究的目的:

  • 为了研究4H碳化中特定点缺陷的电和光学特性.
  • 挑战对半导体缺陷行为的传统理解.
  • 识别和描述一类光学活跃但电气不活跃的点缺陷.

主要方法:

  • 在4H碳化中的点缺陷的实验性表征.
  • 对主半导体的光学和电气性能进行分析.
  • 光谱技术用于探测缺陷状态.

主要成果:

  • 在光学活跃的4H碳化中证明了一个特定的点缺陷.
  • 证据表明,这个缺陷在它的基本状态下是电不活跃的.
  • 识别一个未被识别的点缺陷类别,具有不同的属性.

结论:

  • 并非所有半导体中的光学活性点缺陷在它们的基本状态下都是电活动的.
  • 这一发现需要重新评估缺陷的光学和电气特性之间的关系.
  • 光学活跃,电气不活跃的缺陷的存在为半导体应用开辟了新的途径.