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Updated: Jun 16, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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在MoS2中进行电子隐蔽,用于高性能光电子产品

Yu-Xiang Chen1,2,3, Jian-Jhang Lee1, Ding-Rui Chen4

  • 1Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.

Nano letters
|May 28, 2025
PubMed
概括

在二维材料中隐藏电子,使用缺陷的金属装饰,提高光电子性能. 这种技术提高了载体的移动性和寿命,使得高度敏感和快速的光传感器成为可能.

关键词:
2D 材料是二维材料.库伦波散射是一种库伦波散射.在MoS2中,MoS2就是MoS2.缺陷限制移动性的缺陷.电子遮蔽是一种电子遮蔽.电子 - 缺陷相互作用.职位的空缺 职位的空缺 职位的空缺

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