0D/2D

Zhe-Hao Liu1, Po-Hsuan Hsiao1, Pin-Chao Liao2

  • 1Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 70101, Taiwan.

概括

研究人员使用碳量子点 (CQD) 和功能化石墨烯 (f-Gra) 开发了一种基于石墨烯的新型记忆装置. 这一创新大大降低了非易失性内存应用的擦断电压.

相关概念视频

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Dielectric Polarization in a Capacitor

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Electrostatic Boundary Conditions in Dielectrics

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Interfacial Electrochemical Methods: Overview01:06

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