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Updated: Sep 20, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

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在一个SnSSe同质双层中,介于素对,双轴应变和层间距离调节的2型带对齐:基于密度函数理论的密度功能分析

Naresh Bahadursha1, Chanda Bhavitha Sri1, Kuna Krishna Ruthvik1

  • 1Electrical and Electronics Engineering Department, Birla Institute of Technology and Science-Pilani, Hyderabad Campus, Hyderabad-500078, India. sayan.kanungo@hyderabad.bits-pilani.ac.in.

Nanoscale
|May 29, 2025
PubMed
概括

这项研究表明,双层硫化锡化 (SnSSe) 具有可调节的2型带对齐和激发性质. 应变工程是控制Janus材料中这些电子特性的关键.

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