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超越谷物边界的扭曲双层MoS的增长2

Qingguo Gao1, Lu Cheng1, Shuting Wei1

  • 1School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China.

ACS applied materials & interfaces
|June 2, 2025
PubMed
概括

研究人员使用二次硫供应实现了双层二硫化物 (MoS2) 的超谷物增长. 这种方法可以为先进的电子和量子应用进行大规模合成扭曲的二维材料.

关键词:
莫伊尔超级格子 莫伊尔超级格子在谷物边界之外.化学蒸气沉积 化学蒸气沉积谷物边界的谷物边界是什么小小的扭曲角度,小小的扭曲角度扭曲的双层MoS2的两个层.两个维的材料是二维材料.

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